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參數(shù)資料
| 型號(hào)： | 934056632215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大小： | 257K |
| 代理商： | 934056632215 |
Philips Semiconductors
Product Specification
TOPFET high side switch
PIP3211-R
Fig.16. Typical threshold voltage characteristic.
V
IG = f(Tj); condition 9V
≤ V
BG
≤ 16V
Fig.17. Typical input clamping voltage.
V
IG = f(Tj); condition II = 200
A, V
BG = 13V
Fig.18. Typical status low characteristic, T
j = 25 C.
I
S = f(VSG); conditions VIG = 5V, VBG = 13V,IL = 0A
Fig.19. Typical status clamping voltage.
V
SG = f(Tj); condition IS = 100
A, V
BG = 13V
Fig.20. Typical status characteristic, T
j = 25 C.
I
S = f(VSG); conditions VIG = VBG = 0V
Fig.21. Typical battery to ground clamping voltage.
V
BG = f(Tj); parameter IG
1
1.5
2
2.5
3
-50
0
50
100
150
200
Tj /
OC
VIG / V
VIG(ON)
VIG(OFF)
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
7.50
-50
0
50
100
150
200
Tj /
OC
VSG / V
VIG / V =
0
5
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
7.50
-50
0
50
100
150
200
Tj /
OC
VIG / V
IS / mA
0
5
10
15
20
02468
10
VSG / V
IS / mA
0
2
4
6
8
012345
VSG / V
50
55
60
65
-50
0
50
100
150
200
Tj /
OC
VBG / V
IG =
1 mA
200 mA
September 2001
9
Rev 1.000
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