參數(shù)資料
型號(hào)： 934056639135
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKGE-2
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 105K
代理商： 934056639135
2003 Feb 24
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2022-30
handbook, halfpage
Gp
(dB)
Gp
η
D
(%)
η
D
15
10
5
0
60
20
0
40
MLD935
020
10
30
40
50
PL (PEP) (W)
Fig.2
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
VDS = 28 V; IDQ = 240 mA; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
handbook, halfpage
dim
(dBc)
d3
d5
d7
020
10
30
40
50
PL (PEP) (W)
0
20
60
80
40
MLD936
VDS = 28 V; IDQ = 240 mA; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.3
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
Gp
(dB)
η
D
(%)
15
10
5
0
60
20
0
40
MLD937
020
10
30
40
50
PL (PEP) (W)
(1)
(3)
(2)
(4)
(6)
(5)
Gp
η
D
Fig.4
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
VDS = 28 V; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
(1) IDQ = 290 mA.
(2) IDQ = 240 mA.
(3) IDQ = 190 mA.
(4) IDQ = 190 mA.
(5) IDQ = 240 mA.
(6) IDQ = 290 mA.
handbook, halfpage
dim
(dBc)
020
10
30
40
50
PL (PEP) (W)
0
20
60
80
40
MLD938
(2)
(3)
(1)
VDS = 28 V; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.5
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
(1) IDQ = 190 mA.
(2) IDQ = 240 mA.
(3) IDQ = 290 mA.
相關(guān)PDF資料
PDF描述
0603F102xxx Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
934056643127 54 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934056645118 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
934056646127 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934056647127 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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