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參數(shù)資料
| 型號(hào)： | 934056645118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 260K |
| 代理商： | 934056645118 |
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOS standard level FET
Product data
Rev. 02 — 5 July 2002
2 of 13
9397 750 09938
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 175 °C
-
60
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
-
73
A
Ptot
total power dissipation
Tmb =25 °C
-
149
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS = 10 V; ID = 25 A
12
14
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj ≤ 175 °C
-
60
V
VDGR
drain-gate voltage (DC)
25
°C ≤ Tj ≤ 175 °C; RGS =20k
-60
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
-73
A
-52
A
IDM
peak drain current
-
266
A
Ptot
total power dissipation
-
166
W
Tstg
storage temperature
55
175
°C
Tj
operating junction temperature
55
175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
73
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
266
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load; IAS =50A;
tp = 0.1 ms; VDD ≤ 25 V; RGS =50 ;
VGS = 5 V; starting Tj =25 °C;
-
125
mJ
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