參數(shù)資料
型號(hào)： 934056660115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 1000 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SMT6, SSOT6, SMD, SC-74, TSOP-6
文件頁(yè)數(shù)： 7/12頁(yè)
文件大小： 70K
代理商： 934056660115
2001 Dec 13
4
Philips Semiconductors
Product specication
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor unless otherwise specied; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB =40V; IE =0
100
nA
VCB =40V; IE = 0; Tj = 150 °C
50
A
ICEO
collector-emitter cut-off current
VCE =30V; IB =0
100
nA
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
VCE =5V; IC =1mA
300
VCEsat
collector-emitter saturation
voltage
IC = 100 mA; IB =1mA
200
mV
IC = 500 mA; IB =50mA
250
mV
IC = 1 A; IB = 100 mA
500
mV
NPN transistor
hFE
DC current gain
VCE =5V; IC = 500 mA
300
900
VCE =5V; IC =1A
200
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
1.2
V
VBEon
base-emitter turn-on voltage
VCE =5V; IC =1A
1.1
V
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
260
<500
m
fT
transition frequency
VCE =10 V; IC = 50 mA; f = 100 MHz
150
MHz
Cc
collector capacitance
VCB =10V; IE =Ie = 0; f = 1 MHz
10
pF
PNP transistor
hFE
DC current gain
VCE = 5 V; IC = 100 mA
300
800
VCE = 5 V; IC = 500 mA
250
VCE = 5 V; IC = 1 A
160
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 50 mA
1.1
V
VBEon
base-emitter turn-on voltage
VCE = 5 V; IC = 1A
1.0
V
RCEsat
equivalent on-resistance
IC = 500 mA; IB 50 mA; note 1
300
<500
m
fT
transition frequency
VCE = 10 V; IC = 50 mA;
f = 100 MHz
150
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f =1 MHz
12
pF
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