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參數(shù)資料
| 型號(hào)： | 934056692127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 198 A, 40 V, 0.0059 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 358K |
| 代理商： | 934056692127 |
Philips Semiconductors
BUK95/96/9E04-40A
TrenchMOS logic level FET
Product data
Rev. 01 — 24 October 2001
2 of 15
9397 750 08649
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
Current is limited by power dissipation chip rating
[2]
Continuous current is limited by package
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
40
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
198
A
Ptot
total power dissipation
Tmb =25 °C
-
300
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID = 25 A
3.5
4.4
m
Tj =25 °C; VGS = 4.3 V; ID = 25 A
3.7
5.9
m
Tj =25 °C; VGS = 10 V; ID =25A
2.9
4
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
40
V
VDGR
drain-gate voltage (DC)
RGS =20k
-40
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
-
198
A
-75
A
-75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
-
794
A
Ptot
total power dissipation
-
300
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-
198
A
-75
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
794
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =75A;
VDS ≤ 40 V; VGS =5V; RGS =50 ;
starting Tmb =25 °C
-
1.6
J
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