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參數(shù)資料
| 型號： | 934056693127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 338K |
| 代理商： | 934056693127 |
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
5 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C40
V
Tj = 55 °C36
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS = 40 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj =25 °C
3.9
4.5
m
Tj = 175 °C
8.5
m
Dynamic characteristics
Qg(tot)
total gate charge
VGS =10V;VDD =32V;
117
nC
Qgs
gate-to-source charge
19
nC
Qgd
gate-to-drain (Miller) charge
50
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
4300
5730
pF
Coss
output capacitance
1400
1680
pF
Crss
reverse transfer capacitance
800
1100
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =10V; RG =10 ;
33
ns
tr
rise time
110
ns
td(off)
turn-off delay time
151
ns
tf
fall time
76
ns
Ld
internal drain inductance
from drain lead 6mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404 / SOT226
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
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