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| 型號(hào)： | 934056698118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 55 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大小： | 284K |
| 代理商： | 934056698118 |
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Philips Semiconductors
BUK9225-55A
TrenchMOS logic level FET
Product specication
Rev. 01 — 17 April 2001
6 of 13
9397 750 08134
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 15 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
50
ns
Qr
recovered charge
85
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03na05
0
20
40
60
80
100
120
140
160
180
02
46
8
10
VDS (V)
ID
(A)
2.2
3
4
5
6
7
10
8
VGS (V) = 9
03na03
10
15
20
25
30
35
40
45
24
68
10
VGS (V)
RDSon
(m
)
03na06
10
15
20
25
30
35
40
45
50
10
30
50
70
90
ID (A)
RDSon
(m
)
5
4
3.8
3.6
3.4
3.2
3
VGS (V)=
03ne89
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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