- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24728 > 934056699118 (NXP SEMICONDUCTORS) 55 A, 55 V, 0.0166 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PDF資料下載
參數(shù)資料
| 型號： | 934056699118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 55 A, 55 V, 0.0166 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 289K |
| 代理商： | 934056699118 |
Philips Semiconductors
BUK9215-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 16 August 2001
2 of 12
9397 750 08633
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
Current is limited by power dissipation chip rating
[2]
Continuous current is limited by bond wires
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-62
A
Ptot
total power dissipation
Tmb =25 °C
-
115
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID = 25 A
13
15
m
Tj =25 °C; VGS = 4.5 V; ID = 25 A
-
16.6
m
Tj =25 °C; VGS = 10 V; ID = 25 A
11
13.6
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
-55
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
-62
A
-55
A
-44
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
-
248
A
Ptot
total power dissipation
-
115
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-62
A
-55
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
248
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =62A;
VDS ≤ 55 V; VGS =5V; RGS =50 ;
starting Tj =25 °C
-
211
mJ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934056700118 | 55 A, 55 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 0603HC-10NXJLU | RF inductor, ceramic core, 5% tol, SMT, RoHS |
| 934056702118 | 48 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 0603HC-10NXJLW | RF inductor, ceramic core, 5% tol, SMT, RoHS |
| 0603HC-12NXGLU | RF inductor, ceramic core, 2% tol, SMT, RoHS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052412 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。