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參數資料
| 型號： | 934056705115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-6 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 934056705115 |
2001 Nov 07
3
Philips Semiconductors
Product specication
NPN/PNP general purpose transistors
PEMZ1
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
CHARACTERISTICS
Tamb =25 °C; unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
notes 1 and 2
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 30 V; IE =0
100
nA
VCB = 30 V; IE = 0; Tj = 150 °C
10
A
IEBO
emitter-base cut-off current
VEB =4V; IC =0
100
nA
hFE
DC current gain
VCE =6V; IC =1mA
120
VCEsat
collector-emitter saturation
voltage
IC = 50 mA; IB = 5.0 mA; note 1
200
mV
fT
transition frequency
IC = 2 mA; VCE = 12 V; f = 100 MHz 100
MHz
Cc
collector capacitance
IE =ie = 0; VCB = 12 V; f = 1 MHz
TR1 (NPN)
1.5
pF
TR2 (PNP)
2.2
pF
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