參數(shù)資料
型號: 934056707115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 100 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-6
文件頁數(shù): 3/8頁
文件大?。?/td> 46K
代理商: 934056707115
2001 Nov 07
3
Philips Semiconductors
Product specication
PNP general purpose double transistor
PEMT1
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
Tamb =25 °C; unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
notes 1 and 2
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
ICBO
collector-base cut-off current
VCB = 30 V; IE =0
100
nA
VCB = 30 V; IE = 0; Tj = 150 °C
10
A
IEBO
emitter-base cut-off current
VEB = 4 V; IC =0
100
nA
hFE
DC current gain
VCE = 6 V; IC = 1 mA
120
VCEsat
collector-emitter saturation
voltage
IC = 50 mA; IB = 5 mA; note 1
200
mV
Cc
collector capacitance
VCB = 12 V; IE =Ie = 0; f = 1 MHz
2.2
pF
fT
transition frequency
VCE = 12 V; IC = 2 mA;
f = 100 MHz
100
MHz
handbook, halfpage
0
300
400
100
200
MHB987
101
1
10
IC (mA)
hFE
102
103
Fig.2
DC current gain as a function of collector
current; typical values.
VCE = 5V.
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