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| 型號(hào)： | 934056710115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-6 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 44K |
| 代理商： | 934056710115 |
2001 Sep 14
4
Philips Semiconductors
Preliminary specication
NPN resistor-equipped double transistor
R1=10k
, R2 = open
PEMH4
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
ICBO
collector cut-off current
IE = 0; VCB =50V
100
nA
ICEO
collector cut-off current
IB = 0; VCE =50V
1
A
IB = 0; VCE =30V; Tj = 150 °C
50
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
A
hFE
DC current gain
IC = 1 mA; VCE = 5 V
200
VCEsat
collector-emitter saturation voltage
IC = 5 mA; IB = 0.25 mA
150
mV
R1
input resistor
7
10
13
k
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
Fig.3
DC current gain as a function of collector
current; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb =40 °C.
handbook, halfpage
600
0
101
110
102
MGM902
IC (mA)
hFE
(1)
(2)
(3)
200
400
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb =40 °C.
handbook, halfpage
101
MGM901
102
VCEsat
(V)
(2)
(3)
(1)
101
110
102
IC (mA)
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