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| 型號(hào)： | 934056727115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 47K |
| 代理商： | 934056727115 |
2001 Sep 19
4
Philips Semiconductors
Product specication
PNP resistor-equipped double transistor; R1 = 4.7 k
PUMB3
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
ICBO
collector-base cut-off current
VCB = 50 V; IE =0
100
nA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB =0
1
A
VCE = 30 V; IB = 0; Tj = 150 °C 50
A
IEBO
emitter-base cut-off current
VEB = 5 V; IC =0
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
200
VCEsat
saturation voltage
IC = 5 mA; IB = 0.25 mA
100
mV
R1
input resistor
3.3
4.7
6.1
k
Cc
collector capacitance
IE =ie = 0; VCB = 10 V;
f = 1 MHz
3pF
handbook, halfpage
103
102
10
MHB969
101
1
IC (mA)
hFE
10
102
(1)
(2)
(3)
Fig.3
DC current gain as a function of collector
current; typical values.
VCE =
5V.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
103
102
10
MHB968
101
1
IC (mA)
VCEsat
(mV)
10
102
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
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