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參數(shù)資料
| 型號： | 934056737118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 72 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 272K |
| 代理商： | 934056737118 |
Philips Semiconductors
PHD83N03LT
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 16 July 2001
5 of 13
9397 750 08217
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C25
V
Tj = 55 °C22
V
VGS(th)
gate-source threshold voltage
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±5 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
10
12
m
Tj = 175 °C
17
20.5
m
Tj =25 °C
6.5
9
m
Dynamic characteristics
gfs
forward transconductance
VDS =25V; ID =30A
55
S
Qg(tot)
total gate charge
33
nC
Qgs
gate-source charge
7
nC
Qgd
gate-drain (Miller) charge
12.5
nC
Ciss
input capacitance
1660
pF
Coss
output capacitance
590
pF
Crss
reverse transfer capacitance
380
pF
td(on)
turn-on delay time
VDD =15V; ID = 1 A; VGS =10V; RG =6 ;
resistive load
920
ns
tr
turn-on rise time
14
30
ns
td(off)
turn-off delay time
75
95
ns
tf
turn-off fall time
60
80
ns
Source-drain diode
VSD
0.9
1.2
V
0.95
V
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