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參數(shù)資料
| 型號(hào)： | 934056740127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 869 MHz - 894 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365C, 3 PIN |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | 934056740127 |
2003 Feb 26
4
Philips Semiconductors
Product specication
GSM800 EDGE power module
BGF844
handbook, halfpage
0
4
8
12
16
20
30
29.6
Gp
(dB)
PL (AV)(W)
Gp
η
(%)
28.8
28.4
29.2
48
36
12
0
24
MBL772
Fig.2
GSM EDGE power gain and efficiency as
functions of load power; typical values.
f = 882 MHz.
handbook, halfpage
58
04
12
68
8
26
10
66
64
62
60
MBL773
PL (AV) (W)
ACPR
(dBc)
Fig.3
GSM EDGE ACPR at 400 kHz as a function
of load power; typical values.
f = 882 MHz.
Fig.3
handbook, halfpage
04
12
4
EVM
(%)
PL (AV) (W)
3
1
0
2
8
26
10
MBL774
Fig.4
GSM EDGE rms EVM as a function of
average load power; typical values.
f = 882 MHz.
handbook, halfpage
04
12
0
4
8
2
6
10
8
26
10
PL (AV) (W)
EVM
(%)
MBL775
Fig.5
GSM EDGE peak EVM as function of
average load power; typical values.
f = 882 MHz.
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