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參數(shù)資料
| 型號(hào)： | 934056749118 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 75 A, 40 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-5 |
| 文件頁(yè)數(shù)： | 2/16頁(yè) |
| 文件大小： | 383K |
| 代理商： | 934056749118 |
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Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
Product data
Rev. 03 — 22 January 2002
10 of 16
9397 750 08724
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VDS =25V
Tj =25 °C; ID =50A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
IGS(CL) = 2mA
ID =10A
Fig 15. Drain-source clamping voltage as a function of
drain current; typical values.
Fig 16. Drain-source clamping voltage as a function of
gate current; typical values.
03ne80
0
20
40
60
80
100
0.0
1.0
2.0
3.0
VGS (V)
ID
(A)
Tj = 175 C
Tj =25C
03ne87
0
1
2
3
4
5
0
20
40
60
80
100
120
QG(nC)
V
GS
(V)
VDS = 14 V
V DS = 35 V
03ne82
48.5
49
49.5
50
50.5
51
02468
10
ID (A)
VDSR(CL)
(V)
Tj = 175 C
Tj = 25 C
Tj = -55 C
03ne83
40
42
44
46
48
50
52
54
01
23
-IGS(CL) (mA)
V
DSR(CL)
(V)
Tj = 175 C
Tj = 25 C
Tj = -55 C
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