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參數(shù)資料
| 型號(hào)： | 934056763118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 11/14頁(yè) |
| 文件大小： | 296K |
| 代理商： | 934056763118 |
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Philips Semiconductors
PHP/PHB/PHD45N03LTA
TrenchMOS logic level FET
Product data
Rev. 03 — 2 October 2002
6 of 14
9397 750 10194
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS >ID x RDSON
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03af59
0
15
30
45
0
0.5
1
1.5
2
VDS (V)
ID
(A)
2.5 V
5 V
Tj = 25 °C
VGS = 2 V
10 V
4 V
3.5 V
3 V
6 V
03af61
0
15
30
45
01
23
45
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 °C
175
°C
03af60
0
0.01
0.02
0.03
015
30
45
ID (A)
RDSon
(
)
3.5 V
Tj = 25 °C
5 V
10 V
6 V
VGS = 4 V
03ad57
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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