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參數(shù)資料
| 型號： | 934056767115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 15 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, 6 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 934056767115 |
2001 Nov 07
2
Philips Semiconductors
Product specication
15 V low VCEsat PNP double transistor
PBSS3515VS
FEATURES
300 mW total power dissipation
Very small 1.6 x 1.2 mm ultra thin package
Self alignment during soldering due to straight leads
Low collector-emitter saturation voltage
High current capability
Improved thermal behaviour due to flat leads
Replaces two SC75/SC89 packaged low VCEsat
transistors on same PCB area
Reduces required PCB area
Reduced pick and place costs.
APPLICATIONS
General purpose switching and muting
Low frequency driver circuits
LCD backlighting
Audio frequency general purpose amplifier applications
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low VCEsat double transistor in a SOT666 plastic
package.
NPN complement: PBSS2515VS.
MARKING
TYPE NUMBER
MARKING CODE
PBSS3515VS
35
PINNING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
MAM450
13
2
TR1
TR2
6
4
5
12
3
4
6
5
Top view
Fig.1
Simplified outline (SOT666) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
15
V
ICM
peak collector current
1A
RCEsat
equivalent on-resistance
<500
m
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