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| 型號(hào)： | 934056812118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 61 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大?。?/td> | 321K |
| 代理商： | 934056812118 |
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Philips Semiconductors
BUK9518-55A; BUK9618-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 27 August 2001
5 of 14
9397 750 08461
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
V
Tj = 55 °C50
V
VGS(th)
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 55 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Tj =25 °C
14
18
m
Tj = 175 °C
36
m
VGS = 4.5 V; ID =25A
19
m
VGS =10V; ID =25A
12
16
m
Dynamic characteristics
Qg(tot)
total gate charge
VGS =5V;VDD =44V;
34
nC
Qgs
gate-to-source charge
4.5
nC
Qgd
gate-to-drain (Miller) charge
14
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
1660
2210
pF
Coss
output capacitance
290
350
pF
Crss
reverse transfer capacitance
190
270
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
21
ns
tr
rise time
126
ns
td(off)
turn-off delay time
95
ns
tf
fall time
97
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of die
SOT78
3.5
nH
from upper edge of drain
mounting base to centre of die
SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
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