- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24745 > 934056822127 (NXP SEMICONDUCTORS) 12 A BUF OR INV BASED PRPHL DRVR, PSFM3 PDF資料下載
參數(shù)資料
| 型號： | 934056822127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 12 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 934056822127 |
Philips Semiconductors
Product specification
PowerMOS transistor
PIP3104-P
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Continuous drain source voltage
1
-
50
V
I
D
Continuous drain current
V
IS = 5 V; Tmb = 25 C
-
self -
A
limited
I
D
Continuous drain current
V
IS = 5 V; Tmb ≤ 110 C-
8
A
I
Continuous input current
-
-5
5
mA
I
IRM
Non-repetitive peak input current
t
p ≤ 1 ms
-10
10
mA
P
D
Total power dissipation
T
mb ≤ 25 C
-
40
W
T
stg
Storage temperature
-
-55
175
C
T
j
Continuous junction temperature
2
normal operation
-
150
C
T
sold
Lead temperature
during soldering
-
260
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Inductive load turn-off
I
DM = 8 A; VDD ≤ 20 V
E
DSM
Non-repetitive clamping energy
T
mb ≤ 25 C
-
100
mJ
E
DRM
Repetitive clamping energy
T
mb ≤ 95 C; f = 250 Hz
-
20
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL
PARAMETER
REQUIRED CONDITION
MIN.
MAX.
UNIT
V
DS
Drain source voltage
3
4 V
≤ V
IS ≤ 5.5 V
0
35
V
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
Junction to mounting base
-
2.5
3.1
K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T
j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001
2
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934056823127 | 24 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 934056824118 | 12 A BUF OR INV BASED PRPHL DRVR, PSSO2 |
| 934056825118 | 43 A BUF OR INV BASED PRPHL DRVR, PSSO2 |
| 934056826127 | 43 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 934056827118 | 24 A BUF OR INV BASED PRPHL DRVR, PSSO2 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052412 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。