參數(shù)資料
型號: 934056826127
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: 43 A BUF OR INV BASED PRPHL DRVR, PSFM3
封裝: PLASTIC, TO-220AB, SOT-78B, 3 PIN
文件頁數(shù): 3/6頁
文件大小: 24K
代理商: 934056826127
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3119-P
OUTPUT CHARACTERISTICS
Limits are for -40C
≤ T
mb ≤ 150C; typicals are for Tmb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS = 0 V
V
(CL)DSS
Drain-source clamping voltage
I
D = 10 mA
50
-
V
I
DM = 4 A; tp ≤ 300 s; δ ≤ 0.01
50
60
70
V
I
DSS
Drain source leakage current
V
DS = 40 V
-
100
A
T
mb = 25C
-
0.1
10
A
On-state
V
IS ≥ 4.4 V; tp ≤ 300 s; δ ≤ 0.01
R
DS(ON)
Drain-source resistance
I
DM = 10 A
-
52
m
T
mb = 25C
-
22
28
m
OVERLOAD CHARACTERISTICS
V
IS = 5 V; Tmb = 25C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Short circuit load
I
D
Drain current limiting
V
DS = 13 V
28.5
43
57
A
4.4 V
≤ V
IS ≤ 5.5 V;
21
-
65
A
-40C
≤ T
mb ≤ 150C
Overload protection
P
D(TO)
Overload power threshold
device trips if P
D > PD(TO)
75
185
250
W
T
DSC
Characteristic time
which determines trip time
1
200
380
600
s
Overtemperature protection
T
j(TO)
Threshold junction
150
170
-
C
temperature
2
1 Trip time t
d sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO)].
2 This is independent of the dV/dt of input voltage V
IS.
May 2001
3
Rev 1.000
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