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參數資料
| 型號： | 934056841127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 8/14頁 |
| 文件大小： | 286K |
| 代理商： | 934056841127 |
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
TrenchMOS logic level FET
Product data
Rev. 04 — 9 September 2002
3 of 14
9397 750 10158
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse; VGS =5V.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (°C)
Pder
(%)
03aa24
0
40
80
120
0
50
100
150
200
Tmb (°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ag19
1
10
102
103
1
10
102
VDS (V)
ID
(A)
tp = 10 s
DC
100 ms
10 ms
Limit RDSon = VDS / ID
1 ms
100
s
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