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參數(shù)資料
| 型號： | 934056853118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 296K |
| 代理商： | 934056853118 |
Philips Semiconductors
BUK9245-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 11 October 2001
5 of 12
9397 750 08559
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
V
Tj = 55 °C50
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 55 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =5A;
Tj =25 °C
31
45
m
Tj = 175 °C
90
m
VGS = 4.5 V; ID =5A
50
m
VGS =10V; ID = 5 A
27
40
m
Dynamic characteristics
Qg(tot)
total gate charge
VGS =5V;VDD =44V;
14
nC
Qgs
gate-to-source charge
1.6
nC
Qgd
gate-to-drain (Miller) charge
6.3
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
750
1006
pF
Coss
output capacitance
140
166
pF
Crss
reverse transfer capacitance
97
132
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
10
ns
tr
rise time
132
ns
td(off)
turn-off delay time
38
ns
tf
fall time
112
ns
Ld
internal drain inductance
measured from drain to
centre of die
2.5
nH
Ls
internal source inductance
measured from source lead
to source bond pad
7.5
nH
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