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參數資料
| 型號： | 934056859115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-6 |
| 文件頁數： | 4/9頁 |
| 文件大小： | 66K |
| 代理商： | 934056859115 |
2001 Nov 07
4
Philips Semiconductors
Product specication
NPN/PNP resistor-equipped transistors
PEMD12
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 50 V; IE =0
100
nA
ICEO
collector-emitter cut-off current
VCE = 50 V; IB =0
1
A
VCE = 30 V; IB = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
90
A
hFE
DC current gain
VCE =5V; IC =5mA
80
VCEsat
saturation voltage
IC = 10 mA; IB = 0.5 mA
150
mV
Vi(off)
input off voltage
VCE =5V; IC = 100 A
1.2
0.8
V
Vi(on)
input on voltage
VCE = 0.3 V; IC = 2 mA
3
1.6
V
R1
input resistor
33
47
61
k
resistor ratio
0.8
1
1.2
Cc
collector capacitance
IE =ie = 0; VCB =10V;
f = 1 MHz
TR1 (NPN)
2.5
pF
TR2 (PNP)
3pF
R2
R1
--------
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