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參數(shù)資料
| 型號： | 934056921125 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 48K |
| 代理商： | 934056921125 |
2002 Jun 12
3
Philips Semiconductors
Product specication
20 V low VCEsat PNP transistor
PBSS5320D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
20
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
3A
ICM
peak collector current
5A
IB
base current
500
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
600
mW
Tamb ≤ 25 °C; note 2
750
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
208
K/W
note 2
160
K/W
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