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參數(shù)資料
| 型號： | 934056935126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 934056935126 |
2002 Sep 20
3
Philips Semiconductors
Product specication
NPN general purpose transistor
PSS9014C
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB =30V; IE =0
15
nA
VCB =30V; IE = 0; Tamb = 150 °C
5
A
ICEO
collector-emitter cut-off current
VCE =30V; IB =0
100
nA
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
IC = 1 mA; VCE = 5 V
200
300
600
IC = 2 mA; VCE = 5 V
200
300
450
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 5 mA; note 1
200
300
mV
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB = 0.5 mA; note 1
815
850
mV
VBEon
base-emitter turn-on voltage
IC = 2 mA; VCE = 5 V
580
650
700
mV
fT
transition frequency
IC = 50 mA; VCE =10V;
f = 100 MHz
100
220
MHz
Cc
collector capacitance
VCB =10V; IE =ie = 0; f = 1 MHz
1.6
1.75
pF
F
noise gure
VCE =5V; IC = 0.2 mA;
RS =2k; f = 1 kHz; B = 200 Hz
10
dB
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