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參數(shù)資料
| 型號(hào)： | 934056947115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-243AA |
| 封裝： | PLASTIC, MPT3, SC-62, UPAK-3 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 72K |
| 代理商： | 934056947115 |
2002 Feb 04
4
Philips Semiconductors
Product specication
NPN 7 GHz wideband transistor
BFQ591
CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
.
2. dim = 60 dB (DIN45004B); Vp =Vo; Vq =Vo 6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;
measured at f(p+q+r) = 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage IC = 0.1 mA; IE =0
20
V
V(BR)CES
collector-emitter breakdown
voltage
IC = 0.1 mA; IB =0
15
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.1 mA; IC =0
3V
ICBO
collector-base leakage current
IE = 0; VCB =10
100
nA
hFE
DC current gain
IC =70mA; VCE = 8 V
6090250
Cre
feedback capacitance
IC = 0; VCB = 12 V; f = 1 MHz
0.8
pF
fT
transition frequency
IC = 70 mA; VCE =12V;
f = 1 GHz
7
GHz
GUM
maximum unilateral power gain;
note 1
IC = 70 mA; VCE =12V;
Tamb =25 °C
f = 900 MHz
11
dB
f = 2 GHz
5.5
dB
|s
21|
2
insertion power gain
IC = 70 mA; VCE =12V;
f = 1 GHz; Tamb =25 °C
10
dB
Vo
output voltage
note 2
700
mV
G
UM
10 log
s
21
2
1s
11
2
–
() 1s
22
2
–
()
-------------------------------------------------------- dB
=
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