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參數(shù)資料
| 型號(hào)： | 934056960127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 277K |
| 代理商： | 934056960127 |
Philips Semiconductors
PHP/PHB152NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 20 February 2002
2 of 13
9397 750 09353
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
25
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
75
A
Ptot
total power dissipation
Tmb =25 °C
230
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
Tj =25° C; VGS =10V;ID =25A
3
4
m
Tj =25° C; VGS =5V;ID =25A
3.6
5
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
25
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20k
25
V
ID
drain current (DC)
75
A
75
A
VGS
gate-source voltage
±20
V
IDM
peak drain current
240
A
Ptot
total power dissipation
230
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
75
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
240
A
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