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參數(shù)資料
| 型號： | 934056971115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-89, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 934056971115 |
2002 Mar 15
4
Philips Semiconductors
Product specication
PNP resistor-equipped transistor
R1=10k
; R2=47k
PDTA114YEF
handbook, halfpage
103
102
10
1
MHC177
101
1
10
IC (mA)
hFE
102
(1)
(2)
(3)
Fig.3
DC current gain as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
103
102
10
MHC176
101
1
10
IC (mA)
VCEsat
(mV)
102
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
2
0
102
101
MHC179
1
(1)
(2)
(3)
IC (mA)
Vi (off)
10
0.4
0.8
1.2
1.6
Fig.5
Input-off voltage as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
102
10
1
MHC178
101
1
10
IC (mA)
Vi (on)
102
(1)
(2)
(3)
Fig.6
Input-on voltage as a function of collector
current; typical values.
VCE = 0.3 V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
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