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參數資料
| 型號： | 934056981127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220, 5 PIN |
| 文件頁數： | 3/7頁 |
| 文件大小： | 376K |
| 代理商： | 934056981127 |
Philips Semiconductors
BUK91/9907-55ATE
TrenchPLUS logic level FET
Product data
Rev. 01 — 7 February 2002
3 of 17
9397 750 09138
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6.
Limiting values
[1]
Voltage is limited by clamping
[2]
Current is limited by power dissipation chip rating
[3]
Continuous current is limited by package.
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
VDGS
drain-gate voltage (DC)
-
55
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
-
140
A
-75
A
-75
A
IDM
drain current (peak value)
Tmb =25 °C; pulsed; tp ≤ 10 s;
-
560
A
Ptot
total power dissipation
-
272
W
IGS(CL)
gate-source clamping current
continuous
-
10
mA
tp = 5 ms; δ = 0.01
-
50
mA
Visol(FET-TSD) FET to temperature sense diode
isolation voltage
-
±100
V
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-
140
A
-75
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
560
A
Clamping
EDS(CL)S
non-repetitive drain-source
clamping energy
unclamped inductive load; ID =75A;
VDS ≤ 55 V; VGS =5V; RGS =50 ;
starting Tj =25 °C
-
500
mJ
Electrostatic discharge
Vesd
electrostatic discharge voltage;
pins 1, 3, 5
Human Body Model; C = 100 pF;
R = 1.5 k
-6
kV
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