參數(shù)資料
型號: 934056989118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 12 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SMD, SO-8
文件頁數(shù): 5/12頁
文件大小: 222K
代理商: 934056989118
Philips Semiconductors
SI4884
TrenchMOS logic level FET
Product data
Rev. 02 — 12 April 2002
2 of 12
9397 750 09582
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
-
30
V
VGS
gate-source voltage
-
±20
V
ID
drain current
Tsp =25 °C; Figure 2 and 3
-12
A
IDM
peak drain current
Tsp =25 °C; pulsed; Figure 3
-45
A
Ptot
total power dissipation
Tsp =25 °C; Figure 1
-
2.5
W
Tstg
storage temperature
55
+150
°C
Tj
junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current
Tsp =25 °C
-
12
A
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