參數(shù)資料
型號(hào): 934057020118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: PLASTIC, SMD, SC-63, DPAK-3
文件頁數(shù): 11/14頁
文件大?。?/td> 265K
代理商: 934057020118
Philips Semiconductors
PHP/PHB/PHD63NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 14 June 2002
6 of 14
9397 750 09822
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID xRDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ai85
0
20
40
60
80
0
0.4
0.8
1.2
1.6
VDS (V)
ID
(A)
5 V
Tj = 25 °C
VGS = 3 V
10 V
4.5 V
5.5 V
3.5 V
4 V
6 V
03ai87
0
20
40
60
80
0246
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 °C
175
°C
03ai86
0
10
20
30
0
2040
6080
ID (A)
RDSon
(m
)
5 V
VGS = 4.5 V
Tj = 25 °C
5.5V
10 V
6 V
03af18
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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