參數(shù)資料
型號(hào): 934057029118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù): 9/15頁(yè)
文件大小: 333K
代理商: 934057029118
Philips Semiconductors
PHB/PHD101NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 25 February 2003
3 of 13
9397 750 10929
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse; VGS = 10V.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (°C)
Pder
(%)
03ai19
0
40
80
120
0
50
100
150
200
Tmb (°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ai21
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100
s
10 ms
Limit RDSon = VDS / ID
1 ms
tp = 10 s
相關(guān)PDF資料
PDF描述
061-0005-01 KABEL CINCH HIGH END ROT SCHWARZ 0.5M
061-0010-01 KABEL CINCH HIGH END ROT SCHWARZ 1M
061-0020-01 KABEL CINCH HIGH END ROT SCHWARZ 2M
061-0030-01 KABEL CINCH HIGH END ROT SCHWARZ 3M
934057032118 32 A, 20 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
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