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| 型號(hào)： | 934057032118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 20 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 240K |
| 代理商： | 934057032118 |
Philips Semiconductors
PSMN006-20K
TrenchMOS ultra low level FET
Product data
Rev. 01 — 30 May 2002
3 of 12
9397 750 09631
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
120
0
50
100
150
200
Tsp (°C)
Pder
(%)
03aa25
0
40
80
120
0
50
100
150
200
Tsp (°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ai63
10-1
1
10
102
10-1
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
Limit RDSon = VDS / ID
1 ms
tp = 10 s
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