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參數(shù)資料
| 型號(hào)： | 934057049115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SMD, SC-70, CMPAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | 934057049115 |
2002 Jun 26
3
Philips Semiconductors
Preliminary specication
NPN general purpose transistor
2PD601AW
THERMAL CHARACTERISTICS
Note
1. For mounting conditions, see
“Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0; VCB =60V
10
nA
IE = 0; VCB = 60 V; Tj = 150 °C
5
A
IEBO
emitter-base cut-off current
IC = 0; VEB =5V
10
nA
hFE
DC current gain
IC = 100 mA; VCE = 2 V; note 1
90
DC current gain
IC = 2 mA; VCE =10V
2PD601AQW
160
260
2PD601ARW
210
340
2PD601ASW
290
460
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 10 mA; note 1
500
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
3.5
pF
fT
transition frequency
IC = 2 mA; VCE =10V;
f = 100 MHz
2PD601AQW
100
MHz
2PD601ARW
120
MHz
2PD601ASW
140
MHz
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