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參數資料
| 型號： | 934057051115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 52K |
| 代理商： | 934057051115 |
2002 Apr 09
3
Philips Semiconductors
Product specication
NPN resistor-equipped transistor;
PNP general purpose transistor
PUMF11
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
TR1 (NPN)
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
10
V
Vi
input voltage
positive
+40
V
negative
10
V
IO
output current (DC)
100
mA
ICM
peak collector current
100
mA
TR2 (PNP)
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
416
K/W
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