參數(shù)資料
型號(hào)： 934057074115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SMD, 6 PIN
文件頁(yè)數(shù)： 10/15頁(yè)
文件大?。?/td> 132K
代理商： 934057074115
2003 Jan 30
4
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS4240V
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB =40V; IE =0
100
nA
VCB =40V; IE = 0; Tamb = 150 °C
50
A
ICEO
collector-emitter cut-off current
VCE =30V; IB =0
100
nA
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
VCE =5V; IC =1mA
300
VCE =5V; IC = 500 mA
300
900
VCE =5V; IC =1A
200
VCE =5V; IC = 2 A; note 1
75
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB =1mA
50
75
mV
IC = 500 mA; IB =50mA
70
100
mV
IC = 1 A; IB = 100 mA; note 1
150
190
mV
IC = 2 A; IB = 200 mA; note 1
300
400
mV
RCEsat
equivalent on-resistance
IC = 1 A; IB = 100 mA; note 1
150
<190
m
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
1.2
V
VBEon
base-emitter turn-on voltage
VCE =5V; IC =1A
1.1
V
fT
transition frequency
IC = 50 mA; VCE =10V;
f = 100 MHz
150
MHz
Cc
collector capacitance
VCB =10V; IE =Ie = 0; f = 1 MHz
10
pF
相關(guān)PDF資料
PDF描述
0620120000 MK 6/6,6 POLE,KRG,BN RoHS Compliant: Yes
0620220000 41 A, STRIP TERMINAL BLOCK, 2 ROWS, 1 DECK
934057076118 63 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
934057079115 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
934057078115 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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