參數(shù)資料
型號(hào)： 934057080115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, UMT3, SMD, SC-70, CMPAK-3
文件頁數(shù)： 3/8頁
文件大?。?/td> 45K
代理商： 934057080115
2002 Jun 26
3
Philips Semiconductors
Product specication
PNP general purpose transistor
2PB709AW
THERMAL CHARACTERISTICS
Note
1. For mounting conditions, see
“Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0; VCB = 45 V
10
nA
IE = 0; VCB = 45 V; Tj = 150 °C
5
A
IEBO
emitter-base cut-off current
IC = 0; VEB = 5V
10
nA
hFE
DC current gain
IC = 2 mA; VCE = 10 V
2PB709AQW
160
260
2PB709ARW
210
340
2PB709ASW
290
460
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 10 mA;
note 1
500
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V;
f = 1 MHz
5pF
fT
transition frequency
IC = 1 mA; VCE = 10 V;
f = 100 MHz
2PB709AQW
60
MHz
2PB709ARW
70
MHz
2PB709ASW
80
MHz
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