參數(shù)資料
型號(hào)： 934057508127
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： 75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝： PLASTIC, IPAK-3
文件頁(yè)數(shù)： 12/15頁(yè)
文件大?。?/td> 331K
代理商： 934057508127
Philips Semiconductors
PHP/PHU101NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 25 February 2003
6 of 13
9397 750 10927
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID xRDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ai22
0
20
40
60
80
0
0.2
0.4
0.6
0.8
1
VDS (V)
ID
(A)
3 V
5 V
Tj = 25 °C
VGS = 2.8 V
10 V
3.2 V
3.4 V
4.5 V
3.6 V
3.8 V
4 V
03ai24
0
20
40
60
80
012
34
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 °C
175
°C
03ai23
0
4
8
12
16
0
2040
6080
ID (A)
RDSon
(m
)
4.5 V
VGS = 3.8 V
Tj = 25 °C
5V
10 V
4 V
03af18
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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