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參數(shù)資料
| 型號(hào)： | 935032310623 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 門(mén)電路 |
| 英文描述： | F/FAST SERIES, QUAD 2-INPUT NAND GATE, PDSO14 |
| 封裝： | 3.90 MM, PLASTIC, SOT-108-1, SO-14 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | 935032310623 |
2002 Feb 04
6
Philips Semiconductors
Product specication
NPN general purpose transistors
BC846W; BC847W; BC848W
handbook, halfpage
MGT727
101
110
102
103
IC (mA)
0
600
500
400
300
200
100
hFE
(1)
(2)
(3)
Fig.6
DC current gain as a function of collector
current; typical values.
BC847BW; VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT728
102
101
110
102
103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.7
Base-emitter voltage as a function of
collector current; typical values.
BC847BW; VCE =5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT729
101
110
102
103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
BC847BW; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT730
101
110
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.9
Base-emitter saturation voltage as a
function of collector current; typical values.
BC847BW; IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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