參數(shù)資料
型號(hào)： 935056440602
廠商： NXP SEMICONDUCTORS
元件分類： 放大器
英文描述： RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： SOT109-1, MS-012AC, SO-16
文件頁數(shù)： 15/21頁
文件大小： 243K
代理商： 935056440602
Philips Semiconductors
Product specification
SA5219
Wideband variable gain amplifier
1997 Nov 07
3
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
VCC
Supply voltage
-0.5 to +8.0
V
PD
Power dissipation, TA = 25oC (still air)1
16-Pin Plastic DIP
16-Pin Plastic SO
1450
1100
mW
TJMAX
Maximum operating junction temperature
150
°C
TSTG
Storage temperature range
-65 to +150
°C
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θJA:
16-Pin DIP:
θJA = 85°C/W
16-Pin SO:
θJA = 110°C/W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
VCC
Supply voltage
VCC1 = VCC2 = 4.5 to 7.0V
V
TA
Operating ambient temperature range
SA Grade
-40 to +85
°C
TJ
Operating junction temperature range
SA Grade
-40 to +105
°C
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ICC
Supply current
DC tested
36
43
50
mA
AV
Voltage gain (single-ended in/single-ended out)
DC tested, RL = 10k
16
19
22
dB
AV
Voltage gain (single-ended in/differential out)
DC tested, RL = 10k
22
25
28
dB
RIN
Input resistance (single-ended)
DC tested at
±50A
0.8
1.2
1.6
k
ROUT
Output resistance (single-ended)
DC tested at
±1mA
35
60
80
VOS
Output offset voltage (output referred)
+20
±150
mV
VIN
DC level on inputs
1.6
2.0
2.4
V
VOUT
DC level on outputs
1.9
2.4
2.9
V
PSRR
Output offset supply rejection ratio
18
45
dB
VBG
Bandgap reference voltage
4.5V<VCC<7V
RBG = 10k
1.2
1.32
1.45
V
RBG
Bandgap loading
2
10
k
VAGC
AGC DC control voltage range
0-1.3
V
IBAGC
AGC pin DC bias current
0V<VAGC<1.3V
-0.7
-6
A
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