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參數(shù)資料
| 型號： | 935056440623 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | SOT109-1, MS-012AC, SO-16 |
| 文件頁數(shù)： | 4/21頁 |
| 文件大?。?/td> | 243K |
| 代理商： | 935056440623 |
Philips Semiconductors
Product specification
SA5219
Wideband variable gain amplifier
1997 Nov 07
12
S
Magnitude
(dB)
1500
0
10
100
1000
12
Frequency (MHz)
–10
–20
–30
–40
–50
–60
–70
–80
–90
T = 25
°C
RS = RL = 50
Rt = 50
See test-setup 1
SR00299
Figure 27. Reverse Isolation vs Frequency
P
(dBm)
0
0.2
1
0
0.4
0.6
0.8
–1
–5
–10
–15
–20
–25
–30
VAGC (V)
OUTPUT
INPUT
T = 25
°C
RS = RL = 50
Rt = 50
f = 100MHz
See test-setup 1
SR00300
Figure 28. 1dB Gain Compression vs VAGC
IM
Intercept
(dBm)
0
0.2
0.4
0.6
0.8
15
10
5
0
–5
1
T = 25
°C
RS = RL = 50
Rt = 50
f = 100MHz
See test-setup 1
VAGC (V)
OUTPUT
INPUT
3
SR00301
Figure 29. Third-Order Intermodulation Intercept vs VAGC
NF
(dB)
0
0.2
1
20
VAGC (V)
T = 25
°C
RS = RL = 50
Rt = ∞
f = 50MHz
See test-setup 1
0.4
0.6
0.8
18
16
14
12
10
8
6
4
2
0
SR00302
Figure 30. Noise Figure vs VAGC
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