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參數(shù)資料
| 型號(hào)： | 935085330115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 網(wǎng)絡(luò)接口 |
| 英文描述： | DATACOM, INTERFACE CIRCUIT, PDSO8 |
| 封裝： | 3.90 MM, PLASTIC, MS-012, SOT96-1, SOP-8 |
| 文件頁數(shù)： | 17/22頁 |
| 文件大小： | 229K |
| 代理商： | 935085330115 |
PCA82C250_6
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 26 March 2009
4 of 17
NXP Semiconductors
PCA82C250
CAN controller interface
LOW level. The microcontroller should react to this condition by switching the transceiver
back to normal operation (via pin 8). Because the receiver is slow in Standby mode, the
rst message will be lost.
[1]
X = don’t care.
9.
Limiting values
[1]
In accordance with
“IEC 60747-1”. An alternative denition of virtual junction temperature is:
Tvj =Tamb +Pd × Rth(vj-a), where Rth(j-a) is a xed value to be used for the calculation of Tvj. The rating for Tvj
limits the allowable combinations of power dissipation (Pd) and ambient temperature (Tamb).
[2]
Classication A: human body model; C = 100 pF; R = 1500
; V = ±2000 V.
[3]
Classication B: machine model; C = 200 pF; R = 25
; V = ±200 V.
Table 4.
Truth table of the CAN transceiver
Supply
TXD
CANH
CANL
Bus state
RXD
4.5 V to 5.5 V
0
HIGH
LOW
dominant
0
4.5 V to 5.5 V
1 (or oating) oating
oating
recessive
1
< 2 V (not powered)
oating
recessive
X[1]
2V<VCC < 4.5 V
>0.75VCC
oating
recessive
X[1]
2V<VCC < 4.5 V
oating if
VRs > 0.75VCC
oating if
VRs > 0.75VCC
recessive
X[1]
Table 5.
Pin Rs summary
Condition forced at pin Rs
Mode
Resulting voltage or current at pin Rs
VRs > 0.75VCC
Standby
IRs < |10 A|
10 A<IRs < 200 A
Slope control
0.4VCC <VRs < 0.6VCC
VRs < 0.3VCC
High-speed
IRs < 500 A
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced
to pin 2; positive input current.
Symbol Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.3
+9.0
V
Vn
DC voltage at pins 1, 4, 5 and 8
0.3
VCC + 0.3 V
V6, 7
DC voltage at pins 6 and 7
0 V < VCC < 5.5 V;
no time limit
8.0
+18.0
V
Vtrt
transient voltage at pins 6 and 7
see Figure 8
150
+100
V
Tstg
storage temperature
55
+150
°C
Tamb
ambient temperature
40
+125
°C
Tvj
virtual junction temperature
40
+150
°C
Vesd
electrostatic discharge voltage
2000
+2000
V
200
+200
V
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