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參數(shù)資料
| 型號： | 935173420118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 總線收發(fā)器 |
| 英文描述： | ABT SERIES, 16 1-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56 |
| 封裝： | 7.50 MM, PLASTIC, MO-118, SOT-371-1, SSOP3-56 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 935173420118 |
Philips Semiconductors
Si9410DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 05 July 2001
2 of 13
9397 750 08238
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
ID
drain current (DC)
Tamb =25 °C; pulsed: tp ≤ 10 s
7A
Ptot
total power dissipation
Tamb =25 °C; pulsed: tp ≤ 10 s
2.5
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 7 A
2430m
VGS =5V; ID = 4 A
30
40
m
VGS = 4.5 V; ID = 3.5 A
3250m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
7A
5.8
A
IDM
peak drain current
30
A
Ptot
total power dissipation
2.5
W
1.6
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tamb =25 °C; pulsed: tp ≤ 10 s
2.3
A
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