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參數(shù)資料
| 型號： | 935173950112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PZFM9 |
| 封裝： | PLASTIC, SOT-111, DIL-BENT-SIL, 9 PIN |
| 文件頁數(shù)： | 14/18頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 935173950112 |
1995 Feb 07
5
Philips Semiconductors
Preliminary specication
Video output amplier
TDA6111Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134). Voltages measured with respect to GND (pin 4);
currents as specied in Fig.1; unless otherwise specied.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see
“Handling MOS Devices” ).
QUALITY SPECIFICATION
Quality specification
“SNW-FQ-611 part E” is applicable, except for ESD Human body model see Chapter “Limiting
values”, and can be found in the
“Quality reference handbook” (ordering number 9398 510 63011).
THERMAL CHARACTERISTICS
Note
1. External heatsink is required.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDDH
high level supply voltage
0
250
V
VDDL
low level supply voltage
0
14
V
VI
input voltage
0
VDDL
V
VIdm
differential mode input voltage
6+6
V
Vom
measurement output voltage
0
VDDL
Voc
cathode output voltage
VDDL
VDDH
V
Vfb
feedback output voltage
VDDL
VDDH
V
Iin,Iip
input current
0
1
mA
IocsmL
low non-repetitive peak cathode
output current
ashover discharge = 100
C
05A
IocsmH
high non-repetitive peak cathode
output current
ashover discharge = 100 nC
0
10
A
Ptot
total power dissipation
0
4
W
Tstg
storage temperature
55
+150
°C
Tj
junction temperature
20
+150
°C
Ves
electrostatic handling
human body model (HBM)
> 1500
V
machine model (MM)
> 400
V
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
thermal resistance from junction to case (note 1)
12
K/W
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