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參數(shù)資料
| 型號： | 9351832551 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 其它接口 |
| 英文描述： | SPECIALTY INTERFACE CIRCUIT, PQFP48 |
| 封裝： | PLASTIC, SOT-313, LQFP-48 |
| 文件頁數(shù)： | 4/31頁 |
| 文件大小： | 726K |
| 代理商： | 9351832551 |
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1999 Aug 24
12
Philips Semiconductors
Product specication
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
The current IBIAS is supplied through an RF choke with a
high RF resistance and a low DC resistance (e.g. 5
).
When the laser is in the high (emitting) state, the voltage
drop across the diode and the modulation current of 40 mA
in combination with the bias current of 20 mA through the
30
laser resistance results in:
VLA = 1.2 30 × (0.040 + 0.020) = 3.0 V
No current through the 30
resistor gives VLAQ =0V.
When the laser is in the low (dark) state, the bias current
of 20 mA results in VLA = 1.2 30 × 0.020 = 1.8 V
The modulation current of 40 mA through the 30
resistor
sets the value VLAQ =30 × 0.040 = 1.2 V
The RF choke causes VIBIAS to be stationary and equal to
the average value of VLA minus the small voltage drop
across the choke (bias current of 20 mA through 5
):
VIBIAS = 0.5 × (3.0 1.8) 0.020 × 5= 2.5 V
Table 1
Estimate total power consumption
Note
1. 153 mA = IEE2 (55 + 1.5 × 52+20+3 × 0+55 × 0).
Thermal requirements and cooling
The maximum allowed junction temperature for normal
operation is 125
°C. With an application specific estimated
power dissipation and the maximum ambient temperature,
the required thermal resistance from junction to ambient
Rth(j-a) can be derived. This value strongly depends on the
PCB layout for the IC. It is highly recommended to use
copper area fills around the 8 corner leads (pins VEE2) of
the IC. If a single copper layer PCB with a copper
thickness of 0.034 mm is used, square copper area fills of
10
× 10 mm around the corner leads will result in an
approximate value for Rth(j-a) = 35 K/W. This value
originates from model calculations and is for indication
only. Lower values for Rth(j-a) can be obtained with
multilayer PCBs.
If the required power dissipation is not known, but the
maximum ambient temperature is fixed, the maximum
allowed dissipation as a function of Rth(j-a) can be derived,
namely:
The maximum allowed dissipation to prevent overheating
as a function of the thermal resistance that is achieved in
the application is shown in Fig.12.
The maximum ambient temperature in this application is
85
°C (i.e. 125 85=40 °C temperature head room). A
low Rth(j-a) is recommended.
PVEE1
70 mA
× 4.5 V
315 mW
PVCC
2mA
× 5 V
10 mW
PVEE2
153 mA(1)
× 6.5 V
995 mW
PLA
0.5
× 40 mA × 3.0 V
60 mW
PLAQ
0.5
× 40 mA × 1.2 V
24 mW
PIBIAS
20 mA
× 2.5 V
50 mW
Ptot
PVEE1 +PVCC +PVEE2
(PLA +PLAQ +PIBIAS)
1186 mW
P
tot
125
T
amb max
()
–
R
th j
a
–
()
------------------------------------------
=
Fig.8 Laser high ‘light emitting’.
handbook, full pagewidth
ILA(int)
30
30
Imod
ILA(ext)
OQ2545
100
100
LAQ
1.2 V
GND
LA
IBIAS
EMI choke
laser
MGL736
Ibias
VEE2
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