參數(shù)資料
型號(hào): 935207850118
廠商: NXP SEMICONDUCTORS
元件分類: 無(wú)繩電話/電話
英文描述: SPEAKER PHONE CIRCUIT, PDSO24
封裝: PLASTIC, SOT-137, SO-24
文件頁(yè)數(shù): 5/31頁(yè)
文件大小: 259K
代理商: 935207850118
1997 Nov 25
13
Philips Semiconductors
Product specication
Voice switched speakerphone IC
TEA1095
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
VBB =5V; VGND = 0 V; f = 1 kHz; Tamb =25 °C; MUTETX = LOW; MUTERX = LOW; PD = LOW; RVOL =0 ; measured
in test circuit of Fig.11; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Vn(max)
maximum voltage on all pins;
except pins VBB and RXIN
VGND 0.4
VBB + 0.4
V
VRIN(max)
maximum voltage on pin RXIN
VGND 1.2
VBB + 0.4
V
VBB(max)
maximum voltage on pin VBB
VGND 0.4
12.0
V
Tstg
IC storage temperature
40
+125
°C
Tamb
operating ambient temperature
25
+75
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
TEA1095
50
K/W
TEA1095T
75
K/W
TEA1095TS
104
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply (VBB, PD and GND)
VBB
supply voltage
2.9
12.0
V
IBB
current consumption from pin VBB
2.7
3.8
mA
POWER-DOWN INPUT PD
VIL
LOW level input voltage
VGND 0.4
0.3
V
VIH
HIGH level input voltage
1.5
VBB + 0.4 V
IPD
power-down input current
PD = HIGH
2.5
5
A
IBB(PD)
current consumption from pin VBB
in power-down mode
PD = HIGH
140
190
A
Transmit channel (TXIN, GATX, TXOUT, MUTETX and TXGND)
TRANSMIT AMPLIFIER
Zi
input impedance between
pins TXIN and TXGND
17
20
23
k
Gvtx
voltage gain from TXIN to TXOUT
in transmit mode
VTXIN = 1 mV (RMS);
RGATX = 30.1 k
15.5
dB
Gvtxr
voltage gain adjustment with
RGATX
15.5
+24.5
dB
G
vtxT
voltage gain variation with
temperature referenced to 25
°C
VTXIN = 1 mV (RMS);
Tamb = 25 to +75 °C
±0.3
dB
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