參數(shù)資料
型號: 935209210118
廠商: NXP SEMICONDUCTORS
元件分類: 門電路
英文描述: LVT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
封裝: 4.40 MM, PLASTIC, MO-153, SOT-402-1, TSSOP-14
文件頁數(shù): 8/13頁
文件大?。?/td> 145K
代理商: 935209210118
Philips Semiconductors
Product specification
74LVT20
3.3V Dual 4-input NAND gate
1996 Aug 28
4
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions
Voltages are referenced to GND (ground = 0V)
PARAMETER
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
°C to +85°C
UNIT
MIN
TYP1
MAX
VIK
Input clamp voltage
VCC = 2.7V; IIK = –18mA
–1.2
V
VOH
High-level output voltage
VCC = 2.7 to 3.6V; IOH = –100A
VCC–0.2
V
VOH
High-level output voltage
VCC = 2.7V; IOH = –6mA
2.4
V
VCC = 3.0V; IOH = –20mA
2.0
VOL
Low-level output voltage
VCC = 2.7V; IOL = 100A
0.2
V
VOL
Low-level output voltage
VCC = 2.7V; IOL = 24mA
0.5
V
VCC = 3.0V; IOL = 32mA
0.5
II
Input leakage current
VCC = 0 or 3.6V; VI = 5.5V
10
A
II
Input leakage current
VCC = 3.6V; VI = VCC or GND
±1
A
IOFF
Output off current
VCC = 0V; VI or VO = 0 to 4.5V
±100
A
ICCH
Quiescent supply current
VCC = 3.6V; Outputs High, VI = GND or
VCC, IO = 0
0.02
mA
ICCL
Quiescent supply current
VCC = 3.6V; Outputs Low, VI = GND or VCC,
IO = 0
0.5
1.2
mA
ICC
Additional supply current per input pin2
VCC = 3V to 3.6V; One input at VCC–0.6V,
Other inputs at VCC or GND
0.2
A
CI
Input capacitance
VI = 3V or 0
3
pF
NOTES:
1. All typical values are at VCC = 3.3V and Tamb = 25°C.
2. This is the increase in supply current for each input at the specificed voltage level other than VCC or GND.
AC CHARACTERISTICS
GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500; Tamb = –40°C to +85°C.
LIMITS
SYMBOL
PARAMETER
WAVEFORM
VCC = 3.3V ± 0.3V
VCC = 2.7V
UNIT
MIN
TYP1
MAX
tPLH
tPHL
Propagation delay
An, Bn, Cn, Dn to Yn
1
1.0
3.4
3.2
5.4
4.4
6.4
4.3
ns
NOTE:
1. All typical values are at VCC = 3.3V and Tamb = 25°C.
AC WAVEFORMS
VM = 1.5V, VIN = GND to 2.7V
VM
Qn
Dna, Dnb, Dnc, Dnd
tPHL
tPLH
SF00069
Waveform 1.
Propagation Delay for Inverting Outputs
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