參數(shù)資料
型號: 935210150512
廠商: NXP SEMICONDUCTORS
元件分類: 光電元器件
英文描述: 1 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO24
封裝: 7.50 MM, PLASTIC, SOT-137-1, SOP-24
文件頁數(shù): 7/26頁
文件大?。?/td> 203K
代理商: 935210150512
1998 Mar 17
15
Philips Semiconductors
Preliminary specication
QIC read-write amplier
TZA1000
Zi
input impedance
1
1.84
4
k
VI(6,7)
DC input voltage; pins 6 and 7
1.2
1.3
1.4
V
THD
total harmonic distortion
at 34 and 40 dB gain
settings; Vo(p-p) =1V
40
dB
Gv(servo)
servo preamplier voltage gain WX-WY to output
62
66
70
dB
Vn(i)(eq)(servo)
equivalent input noise voltage:
servo pre-amp
Zsource =0
1.8
2.8
nV/
√Hz
VI(1,3))
DC input voltage pins 1 and 3
2.4
2.5
2.6
V
Isense
sense current
Rref = 430 ; S = 64;
note 3
14.6
15.2
15.8
mA
Isense(max)
maximum sense current
all conditions; note 4
33
mA
V
VDD3-ISENSE
voltage difference between
VDD3 and ISENSE
(pins 9 and 8)
1.6
13.2
V
RESDAC(SENSE)
sense DAC resolution
7
bits
Zo(sense)
output impedance of sense
current source
f = 1 kHz;
Io(sen) =16mA
10
k
Gv(FB)
FB amplier voltage gain
11.5
13
14.5
dB
B(-3dB)
3 dB bandwidth of FB
amplier
5
MHz
fcoupling(FBamp)
3 dB AC coupling of FB
amplier
3
kHz
Ibias
bias current amplitude
(peak-to-peak)
ENFB1 = 0; ENFB0 = 1
10
+10
mA
ENFB1 = 1; ENFB0 = 0 0
+9
mA
ENFB1 = ENFB0 = 1
10
+20
mA
VO(23,24)
DC voltage level of FB outputs
(pins 23 and 24)
B = 0; see Table 3
1.6
1.8
2.0
V
BIASA-BIASB
voltage difference between
BIASA and BIASB
(pins 23 and 24) at maximum
DC bias voltage
B = 31; see Table 3;
bias load 88
1.4
1.52
1.6
V
RESDAC(BIAS)
bias DAC resolution
5
bits
VO(18,19)
read amplier DC output
voltage (pins 18 and 19)
2.4
2.5
2.6
V
VOO(18,19)
read amplier DC offset
voltage (voltage change at
pins 18 and 19)
100
mV
Vo(rms)(18,19)
output voltage (RMS value;
pins 18 and 19)
0.5
V
Io
guaranteed output current
1.5
mA
VO(AGCL)
lower AGC detection voltage
level at OUTB
2.15
2.2
2.25
V
VO(AGCH)
upper AGC detection voltage
level at OUTB
2.75
2.8
2.85
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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