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參數(shù)資料
| 型號(hào)： | 935223940518 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-313-2, PLASTIC, LQFP-48 |
| 文件頁(yè)數(shù)： | 11/15頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | 935223940518 |
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1998 Jan 23
5
Philips Semiconductors
Preliminary specication
GSM 4 W power amplier
CGY2013G
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
THERMAL CHARACTERISTICS
General operating conditions applied.
Note
1. This thermal resistance is measured under GSM pulse conditions.
DC CHARACTERISTICS
VDD = 3.6 V; Tamb =25 °C; general operating conditions applied; peak current values during burst; unless otherwise
specied.
Note
1. The negative bias VGG1 and VGG2 must be applied 10 s before the power amplifier is switched on, and must remain
applied until the power amplifier has been switched off.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDD
positive supply voltage
7V
VGG
negative supply voltage
10
V
Tj(max)
maximum operating junction temperature
150
°C
Tstg
IC storage temperature
150
°C
Ptot
total power dissipation
1.5
W
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
thermal resistance from junction to case; note 1
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5
VDD
positive supply voltage
0
3.6
5.5
V
IDD
positive peak supply current
2.4
3.0
A
Pins VGG1 and VGG2
VGG1
negative supply voltage
note 1
1.8
V
VGG2
negative supply voltage
note 1
1.8
V
IGG1 +IGG2
negative peak supply current
2.5
5
mA
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