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參數(shù)資料
| 型號(hào)： | 935223940551 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-313-2, PLASTIC, LQFP-48 |
| 文件頁(yè)數(shù)： | 8/15頁(yè) |
| 文件大小： | 124K |
| 代理商： | 935223940551 |
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1998 Jan 23
2
Philips Semiconductors
Preliminary specication
GSM 4 W power amplier
CGY2013G
FEATURES
Power Amplifier (PA) overall efficiency 52%
35.5 dB gain
0 dBm input power
Gain control range >55 dB
Low output noise floor of PA < 130 dBm/Hz in GSM RX
band
Wide operating temperature range 20 to +85 °C
LQFP 48 pin package
Compatible with power ramping controller PCF5077
Compatible with GSM RF transceiver SA1620.
APPLICATIONS
880 to 915 MHz hand-held transceivers for E-GSM
applications
900 MHz Time Division Multiple Access (TDMA)
systems.
GENERAL DESCRIPTION
The CGY2013G is a GSM class 4 GaAs Monolithic
Microwave Integrated Circuit (MMIC) power amplifier
specifically designed to operate at 3.6 V battery supply.
The PA requires only a 30 dB harmonic low-pass filter to
comply with the GSM transmit spurious specification.
It can be switched off and its power controlled by
monitoring the actual drain voltage applied to the amplifier
stages.
QUICK REFERENCE DATA
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
SYMBOL
PARAMETER (1)
MIN.
TYP.
MAX.
UNIT
VDD
positive supply voltage
3.6
V
IDD
positive peak supply current
2.4
A
Po(max)
maximum output power
35.5
dBm
Tamb
operating ambient temperature
20
+85
οC
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
CGY2013G
LQFP48
plastic low prole quad at package; 48 leads; body 7
× 7 × 1.4 mm
SOT313-2
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